features z low saturation voltage z high speed switching time z complementary to kta1666 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma, i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb =50v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =2v, i c =500ma 70 240 dc current gain h fe(2) v ce =2v, i c =1.5a 40 collector-emitter saturation voltage v ce(sat) i c =1a, i b =50ma 0.5 v base-emitter saturation voltage v be(sat) i c =1a, i b =50ma 1.2 v transition frequency f t v ce =2v, i c =500ma 120 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf turn on time t on 0.1 storage time t stg 1.0 switching time fall time t f v cc =30v, i c =1a, i b1 =-i b2 =-0.05a 0.1 s classification of h fe(1) rank o y range 70-140 120-240 marking uo uy sot-89 1. base 2. collector 3. emitter 1 2 3 KTC4379 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTC4379 2 date:2011/05 www.htsemi.com semiconductor jinyu
KTC4379 3 date:2011/05 www.htsemi.com semiconductor jinyu
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